InhaltsangabeEpitaxy: Wide Band-Gap Nitrides.- Structural properties of GaN quantum dots.- Stranski-Krastanov growth for InGaN/GaN: wetting layer thickness changes.- Investigation of InxGa1?x N islands with electron microscopy.- First stage of nucleation of GaN on (0001) sapphire.- In GaN-GaN quantum wells: their luminescent and nano-structural properties.- Evolution of InGaN/GaN nanostructures and wetting layers during annealing.- Origins and reduction of threading dislocations in GaN epitaxial layers.- Oxygen segregation to nanopipes in gallium nitride.- Strain relaxation in (Al,Ga)N/GaN heterostructures.- A TEM Study of A1N Interlayer Defects in AlGaN/GaN Heterostructures.- Reduction of threading dislocation density using in-situ SiNx interlayers.- The nucleation structure for cracks in AlGaN epitaxial layers.- Microstructural and optical characterisation of InN layers grown by MOCVD.- Structural properties of InN thin films grown with variable growth conditions on GaN/Al2O3 by plasma-assisted MBE.- Growth and surface characterization of piezoelectric AlN thin films on silicon (100) and (110) substrates.- Characterization and structuring of nitride-based heterostructures for vertical-cavity surface-emitting lasers.- Characterization of defects in ZnS and GaN.- Epitaxy: Silicon-Germanium Alloys.- Use of moire fringe patterns to map relaxation in SiGe on insulator structures fabricated on SIMOX substrates.- TEM measurement of the epitaxial stress of Si/SiGe lamellae prepared by FIB.- Strain relaxation of SiGe/Si heterostructures by helium ion implantation and subsequent annealing: Helium precipitates acting as dislocation sources.- TEM investigation of Si/Ge multilayer structure incorporated into MBE grown Si whiskers.- Local compositional analysis of GeSi/Si nanoclusters by scanning Auger microscopy.- A study of processed and unprocessed dual channel Si/SiGe MOSFET device structures using FIB and TEM.- Epitaxy: Growth and Defect Phenomena.- Novel TEM method for large-area analysis of misfit dislocation networks in semiconductor heterostructures.- Beta to alpha transition and defects on SiC on Si grown by CVD.- Strain relaxation and void reduction in SiC on Si by Ge predeposition.- Defect generation in high In and N content GaInNAs quantum wells: unfaulting of Frank dislocation loops.- Structural characterisation of spintronic GaMnAs and GaMnN heterostructures grown by molecular beam epitaxy.- TEM determination of the local concentrations of substitutional and interstitial Mn and antisite defects in ferromagnetic GaMnAs.- First-principles calculations of 002 structure factors for electron scattering in strained InxGa1?xAs.- Structural characterisation of MBE grown zinc-blende Ga1?xMnxN/GaAs(001) as a function of Ga flux.- Magic matching in semiconductor heterojunctions.- Changes in plasmon peak position in a GaAs/Tn0.2Ga0.8As structure.- Investigation of the electrical activity of dislocations in ZnO epilayers by transmission electron holography.- A TEM study of Mn-doped ZnO layers deposited by RF magnetron sputtering on (0001) sapphire.- High Resolution Microscopy and Nanoanalysis.- Aberration-corrected HREM/STEM for semiconductor research.- Spherical aberration correction and exitplane wave function reconstruction: Synergetic tools for the atomic-scale imaging of structural imperfections in semiconductor materials.- Strain mapping from HRTEM images.- Quantification of the influence of TEM operation parameters on the error of HREM image matching.- ConceptEM: a new method to quantify solute segregation to interfaces or planar defect structures by analytical TEM and applications to inversion domain boundaries in doped zinc oxide.- Electron holography of doped semiconductors: when does it work and is it quantitative?.- Why does a p-doped area show a higher contrast in electron holography than a n-doped area of the same dopant concentration?.- Interference electron microscopy of reverse-biased p-n junctions.- Off-axis electron holography of

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